RESEARCH OF ELECTRICAL AND PHOTOELECTRIC PHENOMENA IN STRUCTURES BASED ON SILICON CONTACT WITH MANGANESE INTERLAYER WITH HIGH MANGANESE SILICIDE FILM

Abstract

The physical properties of the manganese silicide layer formed on the silicon surface were studied. A layer of manganese silicides was deposited on the silicon surface by a solid-phase reaction method, in which ultrapure manganese metal was obtained on a chemically ultrapurified single crystal silicon surface. After the formation of manganese silicides on the surface of silicon, its crystal lattice structure, morphology and phase composition were studied using electronograph and electron microscope devices, JXA-840 type electronograph and XL 30SFED type electron microscope. It was shown that the dynamic process of the formation of a manganese silicide layer on silicon depends on steady and non-steady states.